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    • 专利摘要:
    ENERGY CONVERTER FOR THE CONVERSION OF HIGH ENERGY PHOTON EMISSIONS TO ELECTRIC ENERGY System and methods for converting energy from high energy photons into electricity that make use of a series of materials containing different atomic charges to take advantage of emission of a wide multiplicity of electrons through a single photon containing high energy via a cascade of Auger electron emissions. In one type of modality, a high-energy photon converter preferably includes a wafer on a nanoscale deposited linearly conceived from layers of a first compressed material between layers of a second material showing an atomic charge number differing from the atomic charge number of the first material. In another type of modality, the nanometer scale layers are configured in a shell or tubular configuration and / or include layers of a third insulating material.
    公开号:BR112012016873B1
    申请号:R112012016873-8
    申请日:2011-01-01
    公开日:2020-10-20
    发明作者:Toshiki Tajima；Michl Binderbauer
    申请人:Tae Technologies, Inc.；
    IPC主号:
    专利说明:

    Technical Field
    The modalities described in this report are generally related to the conversion of photonic energy and, more particularly, to systems and methods that aim to facilitate the conversion of energy from high energy photons into electricity. Foundations
    There are many well-known devices that make the electrical conversion of photons energy in the optical range, such as, for example, photovoltaic cells ("solar panels"). These devices, in general, consist of at least two materials (that is, silicon-based semiconductors) containing different physical properties, such as different electronic affinities (see, The Physics of Solar Cells, P. Wurfel, First Edition, Wiley-VCH (2004)). When one of the materials is illuminated by sunlight, solar photons excite electron photons from a valence band to a conductive band, characterizing an electrical mobility. The energy interval between the valence and conduction bands occurs in an order typical of an electron volt, something similar to the energy of the incident solar photons. The positioning of two materials with differentiated electronic affinities gives rise to an electrical voltage along the material's boundary boundary, which can be derived for the use of electrical energy.
    However, there are no known devices dedicated to the conversion of energy into electricity using photons operating in a high energy photon regime, such as XUV, X and gamma rays. Such devices can be used in a wide range of applications - for example, such devices can be used as energy converters aimed at the conversion of high energy photons emitted by means of radioactive materials, such as, for example, spent fuel rods. nuclear, emitted by means of detonation sources, such as, for example, explosives, and emitted by plasmas and beams of particles accelerated under high temperatures, and in the form of devices intended for space applications in the form of power sources, shielding and things like that. Difficulties arise in the provision of such types of devices due to the high penetrability of high energy photons through matter, which results from the consequence of a much smaller interaction of such photons with matter when compared with visible light, and the from the fact that for most materials, the average free path of electrons typically represents many orders of magnitude shorter than the average free path of high-energy photons. As a consequence of this disparity in the free medium paths, electrons emitted from an atom in a material used to capture high-energy photons tend to succumb when recombined, while their energies are converted into heat inside the material trapped in the photon. high energy.
    Thus, it is desirable to provide systems and methods that would facilitate the conversion of energy into electrical energy from high energy photons. summary
    The modalities described in this report are aimed at converting energy into electrical energy from high energy photons. The principle guiding the modalities provided by this report are based on the ejection of electrons from an atom (including the ejection of electrons deeply deposited in the internal structure from an atom of materials with a high atomic number (high Z)) through high energy photons. The ejected electrons conduct kinetic energy, which can lead to the migration of ejected electrons in different regions of a device where the accumulation of ejected electrons can create an electrical potential that can then trigger an external electrical circuit. The spectrum of photons of interest includes photons in the non-visible range including, but without any restriction, the range of XUV rays, X-rays, gamma rays and elements of the genre.
    The systems and methods made available through this report make use of a series of materials containing different atomic charges to take advantage of the emission of an immense multiplicity of electrons coming from a single high-energy photon via a cascade of Auger electron emissions. In a type of modality, a high-energy photon converter preferably includes a wafer on a nanometric scale deposited linearly, formed from a first plurality of layers of a material aimed at absorbing high-energy photons and emitting combined electrons at a second plurality of layers of other types of materials aimed at absorbing or collecting electrons. The material referring to the second plurality of layers has a different atomic charge number than the atomic charge number of the material referring to the first plurality of layers. The first and second plurality of layers are preferably stacked sideways, side by side (that is, face-to-face), interposing with each other, and being oriented at a shallow (small) angle in the direction of propagation of high energy photons. In another type of modality, the layers in nanometric scales are configured in a type of configuration in the form of a shell or tubular. In yet another type of embodiment, the layers include a third plurality of layers containing insulating material.
    The systems and methods described in this report can be used in a wide range of applications - from energy detection and absorption, to energy conversion from high energy photons present in particle accelerators to extremely fusing sources of matter (such as plasmas under high temperatures) and / or detonation sources emitting millions of high-energy photons (such as explosives), energy captured from radioactive nuclear waste emissions (such as spent nuclear fuel rods), and space applications (such as strength, armor, and similar elements), as well as other types of applications readily identifiable to technicians in the field.
    Other types of systems, methods, characteristics and advantages of the example modalities will become immediately apparent to specialists through an analysis of the figures below and the detailed description that follows. Brief Description of the Figures
    The details regarding the example modalities, including the structure and operation, can be captured in part by studying the accompanying figures, where identical reference numerals represent identical parts. The components present in the figures do not necessarily appear in scale, with emphasis being given to illustrating the principles of the invention. In addition, all illustrations are aimed at explaining concepts, where sizes, shapes and other detailed detailed attributes can be illustrated schematically instead of precise or literary rigor.
    Figure 1A consists of a schematic view of a high-energy nanometer-scale photon conversion element deposited linearly.
    Figure 1B consists of a schematic view of an alternative high-energy photon element on a nanometric scale deposited linearly.
    Figure 1C consists of a schematic view of a high-energy photon converter comprising an array of linearly deposited nano-scale conversion elements shown in Figure 1A.
    Figure 1D consists of a schematic view of a high-energy photon converter comprising an array of linearly deposited nano-scale conversion elements shown in Figure 1B.
    Figure 1E consists of a schematic view of a high-energy photon conversion circuit.
    Figure 1F consists of a schematic view of an alternative high-energy photon conversion circuit coupled to an external circuit containing a charge.
    Figure 2A consists of a perspective view of a high energy photon converting element on a nanometric scale deposited cylindrically.
    Figure 2B consists of a perspective view of an alternative element for converting high-energy photons to a nanometric scale deposited cylindrically.
    Figure 2C consists of a perspective view of a high-energy photon converter comprising an array of cylindrically deposited nanometric scale conversion elements shown in Figure 2A.
    Figure 2D consists of an end view of a high-energy photon converter comprising an array of cylindrically deposited naonometric scale conversion elements shown in Figure 2B.
    Figures 2E, 2F and 2G consist of end views of high-energy photon converters containing alternative geometric configurations.
    Figure 3 consists of a diagram illustrating the propagation characteristics of the incident high-energy photons v and the migration characteristics of the electrons, which are ejected from their atoms in a layer of material by means of the incident high-energy photons v.
    Figure 4A consists of a schematic view of a conversion tile containing a plurality of layers stacked linearly.
    Figure 4B consists of a perspective view of a conversion tile containing a plurality of layers stacked linearly.
    Figure 5 consists of a schematic view showing a set of tiles detailed by Figures 4A and 4B positioned along a forming surface intersecting and substantially perpendicular to the photon flow emitted from a photon flow source.
    Figures 6A, 6B and 6C consist of schematic views showing a set of tiles described through Figures 4A and 4B positioned along the forming surfaces intersecting and substantially perpendicular to the photon fluxes emitted from photon flux sources.
    It should be noted that elements of similar structures or functions are, in general, represented by identical reference numerals intended for illustrative purposes throughout the figures. It should also be noted that the figures are only intended to facilitate the description of the preferred modalities. Detailed Description
    Each of the additional features and teachings described below can be used separately or in conjunction with other features and teachings aimed at producing systems and methods aimed at converting energy from high energy photons into electricity. Representative examples of the present invention, examples that make use of many of these features and additional teachings, both separately and in combination, will be described in greater detail with reference to the accompanying drawings. This detailed description is intended merely to instruct a technician in the field with additional details for the practice of the preferred aspects of the present teachings, without pretending to be restrictions on the scope of the invention. Therefore, the combinations of features and steps described in the detailed description below may not be necessary for the practice of the invention in its broadest sense, being included merely to serve representative examples of particular descriptions of the present teachings.
    In addition, several characteristics of the representative examples and dependent claims can be combined in ways that are not specifically and explicitly enumerated in order to provide with additional useful modalities referring to the present teachings. In addition, it is expressly noted that all features described in the report and / or in the claims are intended to present separate and independent descriptions from each other for the purpose of having an original description, as well as for the purpose of becoming restrict the matter in question claimed regardless of the composition of the features in the modalities and / or claims. It is also expressly observed that all ranges of values or indications of groups of entities describe each possible intermediate value or intermediate entity focused on the original description, as well as for the purpose of restricting the matter in question.
    The modalities described in this report are aimed at converting energy from high energy photons (such as photons containing energy preferably in the range of around 100 eV or more) into electricity. The principle governing the modalities is based on the ejection of electrons from an atom (including the ejection of electrons deeply deposited in the internal structure from an atom of materials of high atomic numbers (high Z)) through photons of high energy. The ejected electrons conduct kinetic energy, which can lead to the migration of ejected electrons in different regions of a device, where the accumulation of ejected electrons can create an electrical potential that can be derived to drive an external electrical circuit. The spectrum of photons of interest includes photons preferably from the non-visible regime, including XUV rays, X rays and gamma rays and elements of the genre, but without being restricted to them. The energy from such photons comprises orders of greater magnitudes and, therefore, the margin for thermalization is much more comprehensive (Carnot's theoretical coefficient is close to the unit), than the energy from photons in the visible regime. Due to the high incident photon energy, generally 100 eV or greater, the systems and methods described in this report have the capacity for extraordinarily high energy conversion efficiency, compared to other types of standard photon energy converters, such as such as photoelectric devices (ie solar panels), or devices based on the thermoelectric effect (for example, Seebeck effect).
    As discussed in more detail below, there is a presentation of the systems and methods used to delimit this potentially effective channel in high gain of energies from high energy photons transformed into an appropriate format of electrical energy, which can be derived to drive an external circuit, and thus cover a wide area of applications, including those where strong magnetic fields are present (so that the dynamics of the electrons are characterized by the gyroscopic movement along the magnetic fields). Culminating that the systems and methods described in this report can be used in a wide range of applications - from energy detection and absorption, to energy conversion from high-energy photons to particle accelerators, direct conversion of photon energy high energy from extremely hot matter (such as plasmas at elevated temperatures) and / or detonation sources that emit millions of high energy photons (such as explosives), the energy captured from radioactive nuclear waste emissions (such as bars spent on nuclear fuel), and space applications (such as power sources, armor, and the like), as well as other types of applications readily identifiable by technicians in the field.
    The systems and methods made available through this report make use of a series of materials containing different atomic charges to take advantage of the emission of an immense multiplicity of electrons coming from a single high-energy photon via a cascade of Auger electron emissions. In one type of modality, a high-energy photon converter preferably includes a wafer on a nanometric scale deposited linearly formed from a first plurality of layers of materials aimed at absorbing high-energy photons and emitting electrons combined with a second plurality of layers of other types of materials aimed at absorbing or collecting electrons emitted from the first plurality of layers. Materials referring to the second plurality of layers have a different atomic charge number than the atomic charge numbers of materials referring to the first plurality of layers. In another type of modality, the layers on nanometric scales are configured in shell or tubular formats. The nanometric layers facilitate the segregation of photonic electrons from the donor atoms. Using these structures, the resulting converter can reduce the flow of force on materials that would otherwise be exposed directly to high-energy photons, thus reducing the amount of heat in these materials and also reducing the degradation of materials that otherwise they would be subject to severe harmful radiation from high-energy photons.
    Turning attention to details in the figures, there is an illustration of the systems and methods for converting energy from high-energy photons into electricity showing high efficiency. For the purposes of the discussion that follows, the conversion device or conversion devices are considered to be embedded with strong magnetic fields that can impact decisively on the electron orbits. However, as can be seen below, regarding the characteristic length scales of the device, the electron orbital properties are minimally affected by magnetic fields (with virtually viable resistances), so that the modalities are equally applicable where there is very little or no presence of magnetic fields, such as, for example, in the case of spent nuclear fuel rods.
    With reference to Figures 1A to 1F, there are the modalities of a photonic energy converter containing a linear structure. According to the description in Figure 1A, the most basic building block or conversion element 10 of a photonic energy converter having a linear structure comes to consist of a first layer 12 of type A material having a first atomic number Zi , and preferably, comprising of a component of high atomic number, such as, for example, a refractory metal or metal oxide. The first layer 12 is preferably compressed between two layers 14 of the type B material having a second atomic number Z2 differing from the atomic number of the first layer 12 of the type A material, and preferably, comprising of a metal typically being characterized by a atomic number lower than the atomic number of the first layer 12 of type A material (ie Z2 <Zi). According to the description given in Figure 1B, the basic building block 10 can optionally be enhanced by adding an insulating layer 16 of type C material. An example set of type A, B materials and C can include, without being so restricted to: A = tungsten (W), B = aluminum (Al), C = insulator, such as SiO2. Alternatively, the insulating layer may simply consist of the free flowing Helium element also acting as a refrigerant. However, a technician in the field will readily identify other types of substitute materials while preserving the spirit of the present invention.
    In the preferred embodiments described through Figures 1C and 1D, converters 11 and 13 include a series or arrangement of the basic building blocks stacked sideways side-by-side (i.e. face-to-face) until the maximum path-length spent theoretically by the photon aggregated by means of photons present in all type A layers 12, it will be compatible or greater than the medium free path of high energy photons and will be absorbed by type A material. the description in Figures 1C and 1D, one or more layers 14 of type B material interposed in adjacent layers 12 of type A material, and, optionally, a layer 16 of type C insulating material interposes in adjacent layers 14 of type B material.
    The stacking of building blocks or conversion elements 10 side by side provides a geometry for the general structure that is well suited for an efficient accommodation of electron emissions caused by the high energy photons absorbed in type A material. Due to the polarization of photons E, according to the description given in Figure 3, the direction of propagation of photon v becomes perpendicular, the direction of the ejected electron consists primarily of a Pc plane (containing an angular decay distribution appropriate away from that plane, but showing a maximum in it) perpendicular to the direction of the propagation of photons v (however, such a piano contains the polarization of photons v). According to the description given in Figures 1A and 1B, layers 12 and 14 of the conversion elements 10 are stacked side by side in a direction where the vector normal to the boundary surfaces between the layers is generally orthogonalized in the direction of propagation. of photons v. In a preferred configuration described below, the boundary surfaces between the layers can be aligned at a shallow (small) angle with the direction of propagation of the incident photon containing high energy v. As a result, electrons e- which are ejected from their atoms inside layers 12 of type A material by means of incident photons containing high energy v are able to migrate, as a rule, orthogonally together neighboring layers 14 of type B material.
    The central principle of each modality and any of its variations is the requirement that the photonic electrons emitted and ~ will not be captured and / or absorbed in layer 12 of type A material, however they will be absorbed in the layer 14 of type B material. To ensure that ejected e ~ electrons are not captured within layer 12 of type A material, and to increase the possibility that ejected e ~ electrons escape or migrate from the layer 12 from type A material to layer 14 of type B material, the thickness Ji of each layer 12 of type A material should preferably be less or in the order of the length of the free medium path of the electrons contained in the type A material . The thickness of each layer 14 of the type B material is preferably greater or in the order of the average free length of the electrons contained in the type B material. Preferably, the nanometric arrangement of the layers of these modalities is a reflection of intrinsic physical principles that the mean free path of electrons in type A material, Jc (Zi) will not be much different from the mean free path of the electron of type B material, JC (Z2), while at the same time the path photon free average of type A material is much smaller than its free medium path in type B material, that is, Jc (Zi) «JXZz).
    For example, for 100keV incident photons, the dimensions referring to the typical layer thickness for these systems include the jj for type A material equal to approximately 1 nm and £ for type B material equal to approximately 100 nm, with £ optionally for type C material adjusted to prevent sagging between neighboring layers when necessary. In the case of magnetic fields B going up to 10 T, these dimensions are smaller than the gyroscopic radius pc of the electrons. Therefore, with regard to the extension of these scales, the electrons are not magnetized, but their dynamic characteristics are found primarily in the collision regime. As a result, the conversion elements 10 or converters 11 and 13 discussed above are equally applicable for applications where the magnetic fields are absent or are negligible.
    The migration to neighboring layers 14 of type B material of electrons ejected from the atoms present in layer 12 of type A materials by means of incident photons containing high energy v leads to an accumulation of charge and ultimately generates a potential between layers 12 and 14 of type A and B material. Referring to Figures 1E and 1F, all layers 12 and 14 of type A and type B are connected to the circuits, so that each layer 12 of type A and layer 14 type B act as an individual electrode. As can be readily apparent to a technician in the field, there are almost an infinite number of options and alternatives for connecting layers or groupings of layers in parallel or in series. The best arrangement of such a set of circuits consists of an advantageous application that is determinant of the result. For example, individual layers 12 and 14 can be connected in a way where each layer 12 of type A material will be connected to one of the closest layers 14 of type B material according to the description given in Figure 1E, or each layer 12 of the type A material can be connected to one of the closest layers 14 of the type B material that is separated from it by means of an insulating layer 16 relevant to the type C material contained in Figure 1F. In these configurations, the electrically coupled layers effectively form nano-batteries and spontaneously form a difference in electrical potential to transmit a charge equal to the voltage of an individual nano-battery cell 15 or equal to the sum of the nano-battery cells 17 and 19 in series. According to the description given by Figure 1F, an external circuit 20 containing a charge 22 comes to be coupled next to the nano-battery cells 17 and 19, which are described as being coupled in series, but can be coupled in parallel. Load 22 can consist of an electrically driven system or component, an energy storage system, an electrical network, or the like.
    Alternatively, by adjusting the load resistance of the circuit present between the electrode layers 12 and 14, the steady-state voltage can be controlled externally and the thickness of the insulation layer 16 can be dimensioned accordingly.
    In another type of embodiment, the basic building block includes a cylindrical tube or a shell configuration. According to the illustration pertinent to Figure 2A, a cylindrical conversion element 110 consists of a cylindrical core 112 of type A material surrounded by a shell or cylindrical tube 114 of type B material. According to the description given in Figure 2B , it is possible to optionally again surround each shell 114 of type B material with an insulating shell 116 of type C material. In this type of cylindrical configuration, the same dimensional rules apply for the different thicknesses, that is, the radii of the cylindrical nuclei 112 of the type A material are smaller or of the order of around half the free medium path of the electron in the type A material, around Jc (Zi) / 2, while the shell thickness 114 of type B material is in the order of the free medium path of the electron in material B, around J [c (Z2).
    The advantage of using the cylindrical tube or the shell arrangement of the converter element 110 is that a higher efficiency makes it possible to capture the emitted electrons as they are emitted with equal probability over 360 ° in azimuth. According to the previous description given and in Figure 3, the electrons are ejected in a direction primarily in the Pc plane (containing an appropriate decay angular distribution away from that plane, but being a maximum in the same) perpendicular to the direction of propagation of the photon ve parallel the polarization (E) of the photons. Depending on the polarization angle of the photon, the ejected electrons can be directed in any direction around the 360 ° azimuth, in which case the cylindrical arrangement of the cell leads to a higher electron capture in the type material B, and effectively to a higher efficiency of electron capture compared to the linear configurations described by Figures 1A to 1F.
    Similar to the linear geometry converter described above, cylindrical building blocks 110 are grouped together to form aggregate structures that conform to the same physical size restrictions as the linear geometry converter. As an example, there is a particular stacking arrangement 11 detailed in Figure 2C. Alternatively, according to the description given in Figure 2D, in another type of stacking arrangement 113, the insulating material 116 can fill the void between adjacent conversion elements or cells 110. Such void can further serve as a conduit for circulation of gas refrigerants, such as pressurized helium. This forms an effective cooling mechanism due to the absorption of photons by He to be negligible in relation to the photonic energies of interest. The physical connections are again similar to the linear geometry configurations and in the same way allow the presence of many different options in connection with the layers or shells 112 and 114 of the building blocks 110.
    Alternative geometric configurations are shown in Figures 2E, 2F and 2G. Figure 2E shows a linearly stacked arrangement where layers 112 of type A material are displaced so as to be positioned in adjacent layers 114 of type B material. Figure 2F shows a plurality of cores 112 of type A material surrounded by type B material filling in the empty spaces 114 between cores 112. Although shown in square form, cores 12 can be circular, oval, or the like. Figure 2G is similar to the configuration present in Figure 2D with the exception of the core 112 and the shell layer 114 come to have a square shape. In such cases the dimensioning of elements 112, 114 and 116 conforms within restrictions identical to those described in Figures 1A to 1C and Figures 2A to 2D. The dynamics of the electrons near the edges of the squares are different, but apart from these effects arising from the edges, other physical properties are, in general, similar to cylindrical situations.
    The basic building block, in any type of geometry, formed in up to three types of materials according to the previous description, is suitable for spontaneously generating the separation of electrons from the original site of donor atoms, which may have been ionized by photons of high energy. This in turn gives rise to the generation of electrical voltages between the layers and / or through an optional insulator. According to the discussion above, this type of arrangement can be electrically connected to a circuit to perform electrical work or power transmission to the converter. As a form of an additional variant, it should be noted that an external voltage (polarized voltage) can be applied between these layers, providing additional control over electrical properties and minimizing the potential for bending over of any of the layers.
    Referring to Figures 4A and 4B, in order to minimize the surface area exposed to radiation, ensuring that the incident high energy v photon is captured by layer 212 of type A material, not simply passing through a layer 214 of type B material, stacked layers 212 and 214 of type A and B materials, and optional layer 216 of type C insulation material, of a tile or converter cell 200 are preferably slanted under a shallow (small) angle θ in the direction of propagation of the incident photon containing high energy v, which, for example, can be of the order of around 1/100 radians. The slope of the converter tile 200 also ensures adequate cooling of the bombarded type A material and minimizes the thickness of each individual layer 212 of the type A material (in relation to the mean electron free path), as well as the aggregate effective thickness of all layers 212 of type A material in the integral converter assembly. Tilting the converter tile 200 at a shallow angle also causes electrons to be ejected predominantly perpendicularly to the surface of type A material. This further reduces the required number of repeated layers per tile 200 by a fact of approximately 1 / 0, as long as the transmission distance in type A material is accentuated by the same factor in relation to the case where the orientation angle ψ of the tile surface 200 is organized normal to the direction of propagation of the incident high-energy photon v. This also maximizes electron leakage to the adjacent layer of type B material.
    In an alternative embodiment, the converter tile 200 described in Figures 4A and 4B comprise a plurality of cylindrical conversion elements 110 (shown in Figures 2A and 2B) stacked side by side and inclined at a shallow angle 0.
    With reference to Figure 4B, in order to effectively absorb most of the high energy photons containing energy of the order of around 100 keV, the height H of the device needs to extend to orders of extensions of around 1 centimeter (1 cm) in the general direction of propagation of the predominant photon. This is due to the desire to intercept the integral photon flow containing type A material containing sufficient aggregate thickness in the direction of photon propagation. Since the thickness of each layer of type B material will typically be much greater than the thickness of each layer of type A material ('£), the total height H of the complete stack of building blocks projected in the direction of photon flow needs to be much higher than the average free path of the particular photons present in type A material to ensure that high energy photons encounter type A material over an aggregate distance greater than their free average ways in such material. The height of the complete stack of building blocks, therefore, would exceed the mean free path of photons in type A material by a factor of at least j / Ji or, in the case of inclusion of the insulating layer, by a factor of at least (J3 + £) / Ji.
    As previously mentioned, the generic positioning is shown to be effective in cooling the converter materials as they are heated by photon absorption as well as by subsequent heating by electrons. Cooling is facilitated because the total surface area in the present mode according to the description detailed in Figure 4A will be expanded in comparison to a simple arrangement of accommodation of the cells under an orientation angle perpendicular to the direction of the photon flow incident by a factor of 1/0. It is still possible to drain pressurized gas refrigerant through the pipes built into the structure or simply connect the batteries together with the thermal suckers. A technician in the field will readily identify that there are many other ways to intensify cooling and that the particular implementations that may be governed by the specific application.
    A set 220 of the converter tiles 200, according to the description given in Figure 5, can be positioned along a conformation surface 230 intercepting and being substantially perpendicular to the photon stream 242 emitted from a given stream source photons 240. This configuration provides flexibility and adaptability along a wide spectrum of applications that may require (or benefit from) the generation of energy from an emitted photon stream.
    Other examples of generic geometries for typical applications are described in Figures 6A, 6B and 6C. Figure 6A shows a plasma restraint system 300 that includes a cylindrical chamber 330 containing a surface 334 intercepting and substantially perpendicular to a photon stream 342 emitted from a photon stream source shown as fused plasma. The retention system 300 also incorporates a magnetic field generator 332 positioned along the cylindrical chamber 330 and an arrangement 332 of the conversion tiles 200 fixed along the surface 334 of the chamber 330. Each of the tiles comes to be oriented under a shallow angle close to the direction of propagation of incident high energy photons v of the photon stream 342. Figure 6B shows a restraint system 400 that includes a cylindrical container 430 incorporating a surface 434 intercepting and substantially perpendicular to the photon stream 442 emitted from a surface 440 of the photon stream emitted in the form of plasma under fusion or as spent bars of nuclear fuel. The braking system 400 further comprises an array 432 or converter tiles 200 affixed around the surface 434 of container 430. Each of the tiles is oriented at a shallow angle in the direction of propagation of the incident high energy photons v of the flow of photons 442. Figure 6C shows a particle acceleration system 500 that includes a cylindrical tube 530 having a surface 534 intercepting and being substantially perpendicular to a stream of photons 542 emitted from a source 540 of the photon stream shown as a accelerated particle beam. The accelerator system 500 further comprises a magnetic field generator 532 positioned along the cylindrical tube 530 and an arrangement 532 of the conversion tiles 200 affixed along the surface 534 of the tube 530. Each of the tiles is oriented at an angle shallow in the direction of propagation of incident high energy photons v of photon flow 542.
    In each case, the photons emitted from high energy encounter the type A material over an aggregate distance greater than their average free paths in such material A. This ensures their proper absorption by the atoms within the type A layers. and ultimately amplifying the conversion of photon current to electron current. Around the volume being emitted by the flow, type A material densely covers the entire flow of high-energy photons exposed in the surface areas, while at the same time providing conditions for cooling and electrical connections.
    It should be noted that according to the modalities provided by this report, that multiple electrons are emitted from a particular atom in type A material as a function of the absorption of high energy photons. This is due to an electron being expelled from a deep electronic orbit in particular in the inner shell creating a void, which must be quickly filled through the Auger process, which in turn triggers with secondary and tertiary Auger processes, or a cascade of processes. In addition, secondary photon re-emission can trigger additional processes in neighboring atoms. Consequently, a photon can in principle trigger the aggregate emission of around 100 electrons (and sometimes more). Therefore, this multiple ionization provides several benefits. First, it serves to multiply the amount of electrons per original incident photon by a factor of 100 to 1000, leading to high current amplification. Second, it serves to reduce the electron energies of ten orders of keV to merely ten orders of eV. In this way, the voltage generated can be managed in relation to issues related to interruptions. This provides an intensification of the conversion of photon energy into electricity (their charges and current), while also minimizing the heating of the target in view. In fact, the system serves as an effective cooling mechanism by removing most of the photon energy deposited (via electrical energy) from the material, settling close to the photon source and promptly transporting the converted energy to sites long away from the radiation neighborhood.
    Example modalities provided by this report, however, are intended as illustrative examples only and are not intended to be restrictive in any way. In addition, technicians in the field will identify that similar systems can be equally adapted to photons containing different levels of energy from appropriate modifications of the parameters.
    In the description provided, the invention was detailed with reference to its modalities. However, it is evident that several modifications and alterations can be made without deviating from the broader spirit and scope of the invention. For example, the reader must understand that the specific ordering and combination of the process actions presented in the process flowcharts, described by this report, is for illustrative purposes only, unless otherwise established, with the invention being able to be practiced through the use of different or additional process actions, or through a different combination or different ordering of the process actions. As a form of another example, each characteristic of a type of modality may be mixed and conjugated with other characteristics presented in other modalities. The characteristics and processes known to experts in the field can be incorporated in a similar way as desired. Additionally and obviously, the features can be added or subtracted as desired. Consequently, the invention has no restrictions, except in view of the attached claims table and its equivalents.
    权利要求:
    Claims (19)
    [0001]
    1. Energy converter for converting high-energy photon emissions into electrical energy, FEATURED for understanding: a plurality of layers of a first material (12, 212) that absorbs high-energy photons (242, 342, 442, 542) and emits electrons ejected from an atom in an individual layer among the plurality of layers of the first material through a high energy photon absorbed in the individual layer among the plurality of layers of the first material, with each layer among the plurality of layers of the first material having a thickness measured along the direction of the emitted electrons which is less than the length of the free medium path of the electrons emitted on the first material, wherein the thickness of each layer among the plurality of layers of the first material measured along the propagation direction of a high-energy photon is less than the length of the free medium path of the high-energy photons in the first material, in which the lengths The wave s of the high energy photons are in a non-visible regime, and in which a plurality of layers among the plurality of layers of a first material found by a high energy photon along the propagation direction of the high energy photon having an aggregate thickness measured along the direction of propagation of the high-energy photon that is greater than the length of a free medium path for the high-energy photons in the first material, and a plurality of layers of a second material (14, 214) which collects electrons emitted from the plurality of layers of the first material and electrically coupled to the plurality of layers of the first material, each layer among the plurality of layers of the second material having a thickness greater than the length of the free medium path in the second material of the electrons emitted from the plurality of layers of the first material, in which one or more layers within the plurality of layers of the second material interpose adjacent layers within the plurality of layers of the first material, in which the direction of propagation of the high-energy photons is orthogonal to a vector normal to a boundary surface between adjacent layers of the plurality of layers of the first and second materials, and in which the electrons emitted from the first material are emitted in a direction perpendicular to the direction of propagation of the high energy photons, in which the high energy photons absorbable by the layer of the first material include X-rays, XUV or gamma and have energies with values of the range of 100eV or greater.
    [0002]
    2. Converter according to claim 1, CHARACTERIZED in that it further comprises a plurality of layers of a third material, each layer within the plurality of layers of the third material interposing adjacent layers of one or more layers among the plurality of layers of the second material .
    [0003]
    3. Converter, according to claims 2, CHARACTERIZED by the fact that the third material is SÍO2.
    [0004]
    4. Converter according to claim 1, CHARACTERIZED by the fact that the adjacent layers of the plurality of layers of the first and second materials are stacked face to face.
    [0005]
    5. Converter according to claim 1, CHARACTERIZED by the fact that each layer of the plurality of layers of the first material is configured as a cylindrical core and each layer among the plurality of layers of the second material is configured as a cylindrical shell positioned concentrically around the cylindrical core of the first material, where the radius of the cylindrical core is less than 34 the length of the free medium path of the electrons ejected in the first material.
    [0006]
    6. Converter, according to claim 5, CHARACTERIZED by still comprising a plurality of layers of a third insulating material configured as a cylindrical shell positioned concentrically around the cylindrical shell of the second material.
    [0007]
    7. Converter, according to claim 1, CHARACTERIZED by the fact that the first material comprises a component with a high atomic charge number.
    [0008]
    8. Converter according to claim 7, CHARACTERIZED by the fact that the high atomic charge number component is a refractory metal or a metal oxide.
    [0009]
    9. Converter, according to claim 7, CHARACTERIZED by the fact that the component with a high atomic charge number is tungsten.
    [0010]
    10. Converter, according to claim 1, CHARACTERIZED by the fact that the atomic charge number of the second material differs from the atomic charge number of the first material.
    [0011]
    11. Converter, according to claim 1, CHARACTERIZED by the fact that the number of atomic charges of the second material is less than the number of atomic charges of the first material.
    [0012]
    12. Converter, according to claim 1, CHARACTERIZED by the fact that the second material is a metal.
    [0013]
    13. Converter, according to claim 12, CHARACTERIZED by the fact that the metal is aluminum.
    [0014]
    14. Converter according to claim 1, CHARACTERIZED by the fact that each of the layers among the plurality of layers of the first material is compressed between two layers of the plurality of layers of the second material.
    [0015]
    15. Converter, according to claim 1, CHARACTERIZED by the fact that the plurality of layers of the first and second materials are coupled to a circuit containing a load.
    [0016]
    16. Converter, according to claim 15, CHARACTERIZED by the fact that the load is one of an electrically actionable component, an electricity storage system or an electrical network.
    [0017]
    17. Converter according to claim 1, CHARACTERIZED by the fact that the plurality of layers of the first and second materials are coupled to a surface of a wall that intercepts and is perpendicular to a direction of propagation of a flow of photons emitted at from a source of photon flow, and where each of the boundary surfaces between adjacent layers of the plurality of layers of the first and second materials is oriented at a shallow angle to the direction of propagation of the photon flow.
    [0018]
    18. Converter according to claim 17, CHARACTERIZED by the fact that each layer among the plurality of layers of the first material is configured as a cylindrical core and each layer among the plurality of layers of the second material is configured as a concentric cylindrical shell positioned around the cylindrical nucleus of the first material, where the radius of the cylindrical nucleus is less than Vz of the length of the free medium path of the electrons ejected in the first material.
    [0019]
    19. Converter according to claim 18, characterized in that it further comprises a plurality of layers of a third insulation material configured as a cylindrical shell concentrically positioned around the cylindrical shell of the second material.
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    同族专利:
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    JP6327722B2|2018-05-23|
    IL250054A|2021-04-29|
    AU2016201030B2|2017-03-23|
    KR101962974B1|2019-03-27|
    US20160218235A1|2016-07-28|
    CA2786590A1|2011-07-14|
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    JP6097563B2|2017-03-15|
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    ZA201205568B|2013-09-25|
    MX2012007991A|2012-12-10|
    KR20120134107A|2012-12-11|
    US9570644B2|2017-02-14|
    TWI463681B|2014-12-01|
    EP2522033A1|2012-11-14|
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    法律状态:
    2019-01-08| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|
    2019-08-06| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|
    2019-12-24| B07A| Technical examination (opinion): publication of technical examination (opinion) [chapter 7.1 patent gazette]|
    2020-03-17| B25D| Requested change of name of applicant approved|Owner name: TAE TECHNOLOGIES, INC. (US) |
    2020-04-07| B25B| Requested transfer of rights rejected|Owner name: TAE TECHNOLOGIES, INC. (US) Free format text: INDEFERIDO O PEDIDO DE TRANSFERENCIA CONTIDO NA PETICAO 870200017020 DE 05/02/2020, EM VIRTUDE DO PEDIDO JA ESTAR EM NOME DO INTERESSADO. |
    2020-07-14| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|
    2020-10-20| B16A| Patent or certificate of addition of invention granted|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 01/01/2011, OBSERVADAS AS CONDICOES LEGAIS. |
    优先权:
    申请号 | 申请日 | 专利标题
    US29328210P| true| 2010-01-08|2010-01-08|
    US61/293,282|2010-01-08|
    PCT/US2011/020001|WO2011084903A1|2010-01-08|2011-01-01|Conversion of high-energy photons into electricity|
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