• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    In an electrical component arrangement (1) having at least one first discrete semiconductor component (2), which first discrete semiconductor component (2) has a first housing (3) with a first housing outer surface (4), wherein the first housing outer surface (4) acts as electrical contact of the first housing is formed first semiconductor device (2), it is proposed that the first housing outer surface (4) is electrically conductively connected to an electrically conductive plate (5) of the electrical component assembly (1), and that the electrically conductive plate (5) electrically isolated with a Heatsink (6) of the electrical component assembly (1) is connected.
    公开号:AT515440A1
    申请号:T171/2014
    申请日:2014-03-10
    公开日:2015-09-15
    发明作者:
    申请人:Egston System Electronics Eggenburg Gmbh；
    IPC主号:
    专利说明:

    The invention relates to an electrical component assembly according to the preamble of claim 1.
    There are, in particular in the field of power semiconductors, semiconductor modules known and widely used in which a plurality of semiconductor devices, such as power transistors, constructed directly on the substrate level, are arranged within a single housing. The respective semiconductor modules are arranged on a heat sink for heat dissipation.
    Such semiconductor modules have the disadvantage that they are only offered for a limited number of functions or performance data from the corresponding manufacturers, and therefore are only available for a correspondingly limited number of applications. As a rule, manufacturers of appropriate modules are ready to develop and manufacture on customer request. However, this is associated with significant initial costs and therefore pays off only from a high required number of pieces.
    In the field of small numbers, such as in prototype or small series or special products, such semiconductor modules can therefore often not be used. In particular, in the field of power electronics, this poses the problem of dissipating power loss or heat arising in a small space from the semiconductor component or the semiconductor components. The temperature in the region of a semiconductor device has an immediate effect on its lifetime. The temperature in the region of the semiconductor components further influences the characteristic diagram of the relevant semiconductor component or an operating point setting, which, when the semiconductor device in question is used as an amplifier, has direct effects on the distortion behavior of the relevant circuit arrangement.
    The object of the invention is therefore to provide an electrical component arrangement of the type mentioned, with which the mentioned disadvantages can be avoided, with which an electrical structure in the field of power electronics can be created using discrete semiconductor devices, which has a high reliability and durability.
    This is achieved by the features of claim 1 according to the invention.
    As a result, an electrical structure or a component arrangement in the field of power electronics can be created using discrete semiconductor components, with comparable loss lines as when using special power semiconductor modules. As a result, the temperature in the region of the semiconductor components can be reduced to a predeterminable level, which enables a high level of operational reliability or service life of the structure. This makes it possible, in particular by the respective dimensioning of the electrically conductive plate, to specify or set the temperature in the vicinity of the semiconductor components. As a result, it can be achieved that the temperature is low enough to achieve a long service life of the semiconductor devices, but high enough not to lead to the formation of condensation in a device in which the relevant component assembly is arranged. As a result, a flexible use is given in different device. As a result, electrical or electronic power circuits can be produced in small series, which have a high power density.
    It has been found that with the subject electrical component arrangement in practice a lower heat transfer resistance can be achieved than this is given in, comparable in terms of performance, semiconductor modules. As a result, a flexible structure is possible by means of the subject electrical component arrangement, which is not inferior to a structure in the form of a semiconductor module with respect to the dissipated power loss, and this form of construction may even be superior.
    The subclaims relate to further advantageous embodiments of the invention.
    It is hereby expressly referred to the wording of the claims, whereby the claims at this point are incorporated by reference into the description and are considered to be reproduced verbatim.
    The invention will be described in more detail with reference to the accompanying drawings, in which only preferred embodiments are shown by way of example. Showing:
    1 shows a first embodiment of an objective component arrangement in axonometric representation;
    FIG. 2 shows the components of the component arrangement according to FIG. 1 in an axonometric exploded view; FIG.
    3 shows a second embodiment of an objective component arrangement in axonometric representation;
    4 shows the components of the component arrangement according to FIG. 3 in an axonometric exploded view;
    5 shows the component arrangement according to FIG. 3 with an electrically contacted conductive plate in a first axonometric view;
    FIG. 6 shows the component arrangement according to FIG. 5 in a second axonometric view; FIG.
    FIG. 7 shows the components of the component arrangement according to FIG. 5 in an axonometric exploded view; FIG. and
    Fig. 8 is a block diagram of a subject electrical device.
    FIGS. 1 to 7 show electrical component arrangements 1 and the components of corresponding electrical component arrangements 1, wherein the electrical component arrangement 1 has at least one first discrete semiconductor component 2, which first discrete semiconductor component 2 has a first housing 3 with a first housing outer surface 4, wherein the first housing outer surface 4 is formed as an electrical contact of the first semiconductor device 2, wherein the first housing outer surface 4 is electrically connected to an electrically conductive plate 5 of the electrical component assembly 1, wherein the electrically conductive plate 5 is electrically isolated connected to a heat sink 6 of the electrical component assembly 1 is.
    As a result, an electrical structure or a component arrangement 1 in the field of power electronics can be created using discrete semiconductor components 2, 7, with comparable power loss lines as when using special power semiconductor modules. As a result, the temperature in the region of the semiconductor components 2, 7 can be lowered to a predeterminable level, which enables a high level of operational reliability or service life of the structure. This makes it possible, in particular by the respective dimensioning of the electrically conductive plate 5, to specify or set the temperature in the vicinity of the semiconductor components 2, 7. As a result, it can be achieved that the temperature is low enough to achieve a long service life of the semiconductor components 2, 7, but high enough not to lead to the formation of condensation in a device in which the relevant component arrangement 1 is arranged. As a result, a flexible use in different device 15 is given. As a result, electrical or electronic power circuits can be produced in small series, which have a high power density.
    It has been shown that with the subject electrical component assembly 1 in practice a lower heat transfer resistance can be achieved than this is given in, comparable in terms of performance, semiconductor modules. Thus, for example, a heat transfer resistance with a value of 0.52 K / W could be achieved on a first semiconductor component 2 embodied as an IGBT 10 in accordance with the subject component arrangement 1. In a similar performance comparable structure of a well-known manufacturer of corresponding semiconductor modules, the heat transfer resistance in this area after all, a K / W. As a result, a flexible structure is possible by means of the subject electrical component arrangement, which is not inferior to a structure in the form of a semiconductor module with respect to the dissipated power loss, and this form of construction may even be superior.
    The terms "and" as well as "or" are to be understood as not stated in the context of Boolean operators.
    A discrete semiconductor device 2, 7 is a single, in a separate housing 3, 8 arranged electrical or electronic component or circuit element having its own external terminals. Unlike integrated circuits, which have multiple electrical components in one
    Unite housing. For the sake of simplicity, the additional statement "discrete" may not be given in part, although these are discrete semiconductor components 2, 7.
    The subject invention will be described with reference to the preferred embodiments, which have at least a first and a second discrete semiconductor device 2, 7. The description should also include embodiments with only a single discrete semiconductor component 2 and with a predeterminable plurality of such discrete semiconductor components 2, 7.
    The first discrete semiconductor component 2 is preferably designed as a semiconductor switching element, in particular as an IGBT 10. It may also be provided by the formation of the first semiconductor component 2 as a different power switching element, such as a MosFet. The second discrete semiconductor component 7 is preferably formed as a diode 11. In FIGS. 1 to 7, the terms IGBT and diode are given to the respective semiconductor components 2, 7. Preferably, it is provided in this context that the first discrete semiconductor component 2 and the second discrete semiconductor component 7 form an electrically interconnected semiconductor component pair 2, 7 in an electrical circuit 16.
    The electrical component assembly 1 denotes a mechanical structure or assembly of electrical or electronic components. In this case, the subject electrical component assembly 1 describes the connection of a discrete semiconductor component 2 to a heat sink 6. The term "electrical component assembly 1" describes in particular no type of electrical interconnection or functional contacting of at least one discrete semiconductor device 2, 7 in the context of an electrical circuit 17, but only the mechanical structure or the mechanical arrangement of the relevant at least one discrete semiconductor component 2, 7.
    The first discrete semiconductor component 2 has at least two electrical connections. In this case, the first discrete semiconductor component 2 has a first housing 3, which first housing 3 has a first housing outer surface 4, which is designed as an electrical contact of the first semiconductor component 2. The relevant first housing outer surface 4 is therefore designed to be electrically conductive and connected within the first housing 3 to a semiconductor substrate of the respective first discrete semiconductor component 2.
    The second discrete semiconductor component 7 likewise has at least two electrical connections. In this case, the second discrete semiconductor component 7 has a second housing 8, which second housing 8 has a second housing outer surface 9, which is designed as an electrical contact of the second semiconductor component 7. The relevant second housing outer surface 9 is therefore designed to be electrically conductive and connected within the second housing 8 to a semiconductor substrate of the relevant second discrete semiconductor component 7.
    It is preferably provided that the first housing 3 and / or the second housing 8 is designed as a standard semiconductor housing, in particular as a TO-220 or TO-247. Such housing 3, 8 already have correspondingly formed contacted housing outer surfaces 4, 9.
    The electrical component assembly 1 further comprises a heat sink 6, and an electrically conductive plate 5. It is envisaged that the first housing outer surface 4 is electrically connected to the electrically conductive plate 5. The electrically conductive plate 5 is further electrically isolated connected to the heat sink 6.
    According to the preferred embodiments, it is provided that the second housing outer surface 9 is arranged in an electrically conductive manner next to the first housing outer surface 4 on the same electrically conductive plate 5. Therefore, two discrete semiconductor devices 2, 7 are preferably arranged or fastened on the same electrically conductive plate 5. Fig. 1 shows a corresponding structure. Fig. 2 shows the components of the relevant structure in an exploded view.
    The electrically conductive plate 5 is in particular comprising copper and / or
    Aluminum and / or silver formed. The electrically conductive plate 5 is therefore formed as a good electrical conductor to cause any excessive additional heating at this point. It is preferably provided that the electrically conductive plate 5 has a surface which is larger than the plate 5 facing the first and second housing outer surfaces 4, 9. About the respective specification of the size or the area and thickness of the electrically conductive plate. 5 the heat transfer resistance can be significantly influenced. By appropriately suitable choice of the relevant parameters, as well as the material, a target temperature at the discrete semiconductor devices 2, 7 can be easily achieved.
    In this context, it is preferably provided that the electrically conductive plate 5 has an area which is 3 to 7 times, in particular 5 times, as large as the first housing outer surface 4 and / or second housing outer surface 9 arranged on the plate 5 If a second discrete semiconductor component 7 is arranged on the plate 5, the indication of the size refers to both semiconductor components 2 , 7. Accordingly, in further semiconductor devices on the plate 5 to proceed. It is preferably provided that only the area of the electrical contact on the first or second housing outer surface 4, 9 is considered for the objective determination of the surface of the plate 5. It may be that the respective first and second housing outer surfaces 4, 9 in addition to an electrically conductive contact area further electrically insulated areas, such as an edge region having.
    It is preferably provided that the first and the second housing outer surfaces 4, 9 are each soldered to the electrically conductive plate 5. In FIGS. 2, 4 and 7, a flat solder 29 is shown correspondingly schematically.
    It can also be provided to mechanically press the respective semiconductor components 2, 7 with their first and second housing outer surfaces 4, 9 against the plate 5. By the contact pressure thus generated, the electrical as well as the thermal contact resistance can be lowered in this area.
    As a result, the solder 29 in this area can also be dispensed with in an embodiment which is not shown, since the respective semiconductor components 2, 7 are merely held mechanically on the plate 5 in this way. Preferably, the respective contact pressure is applied by means of at least one spring and / or clamp. It can be provided that a clamp around the cooling rail or the heat sink 6 surrounds and the semiconductor devices 2, 7, which are arranged on both sides of the cooling rail according to the preferred embodiments, each presses against their assigned plate 5.
    It may further be provided between the plate 5 and the first and second outer housing surface 4, 9 provide an electrically conductive oil or a corresponding paste or adhesive.
    The electrically conductive plate 5 is further preferably electrically conductively connected to an electrical supply line 12, in particular a busbar 13. As a result, a low-resistance connection of the relevant semiconductor components 2, 7 can be achieved. In FIGS. 5, 7 and 7 are each a bus bar 13, and wire-shaped supply lines 12 are shown, which each contact the plate 5.
    The heat sink 6 is preferably formed as a fluid-cooled, in particular as a liquid-cooled, heat sink 6 comprising fluid passageways 14, in particular as a cooling rail, as shown in FIGS. 1 to 7. It can also be provided to form the heat sink 6 as a passive heat sink, such as cooling fins.
    The electrically conductive plate 5 is electrically isolated connected to the heat sink 6. It is preferably provided that between the plate 5 and the heat sink 6, an electrical insulating layer 19 or insulating, preferably with low heat transfer resistance with good electrical insulation, arranged. Such an insulating layer 19 is shown in FIGS. 1 to 7.
    According to a particularly preferred embodiment, it is provided that the cooling body 6 is designed as a ceramic cooling body, preferably comprising or consisting of aluminum nitride. Aluminum nitride has a high thermal
    Conductivity at the same time high electrical resistance. As a result, it is possible to dispense with the insulating layer 19.
    FIG. 8 shows a schematic block diagram of a particularly preferred electrical device with an objective electrical component arrangement 1. The relevant electrical device 15 is embodied as an inverter 18. It may be provided to form the electrical device 15 as another electrical device 15. The electrical device 15 according to FIG. 8 has at least one electrical circuit 16, which electrical circuit 16 comprises the first discrete semiconductor component 2 and the second discrete semiconductor component 7, it being understood that a larger number of semiconductor components 2, 7 may be provided.
    According to the preferred embodiment shown in FIG. 8, the electrical device 15 embodied as an inverter 18 has at least one electrical half bridge 17, wherein only one such half bridge 17 is drawn in FIG. 8, and further half bridges 17 are framed by the dash-dotted box 20 are symbolized.
    The at least one electrical half-bridge 17 has two variable resistors 21, which according to the preferred embodiment in each case by a pairing or interconnection of, designed as IGBT 10, the first discrete semiconductor device 2 and, designed as a diode 11 and freewheeling diode, second discrete semiconductor device 7 are formed. The diode 11 is connected in a manner known per se and not shown parallel to the switching element or the IGBT 10.
    The half-bridge 17 has an output 28 between the two variable resistors 21, which is connected to a coil assembly 26, which is further connected to a low-pass filter 27 whose output forms an AC terminal 23 of the device 15. Furthermore, the electrical device 15 according to FIG. 8 has two DC connection lines 24, 25, as well as a drive unit 22, which activates the variable resistors 21 in a predeterminable manner.
    claims:
    权利要求:
    Claims (13)
    [1]
    DR DR. FERDINAND GIBLER / ^ | Q | PDA DOTH DR DR. WOLFGANG POTH VJ I D I-L-. 1. Electrical component arrangement (1) with at least one first discrete semiconductor component (2), which first discrete semiconductor component (2) has a first housing (3) with a first housing exterior surface (4), FIG. wherein the first housing outer surface (4) is formed as an electrical contact of the first semiconductor device (2), characterized in that the first housing outer surface (4) is electrically conductively connected to an electrically conductive plate (5) of the electrical component assembly (1), and the electrically conductive plate (5) is electrically insulated with a heat sink (6) of the electrical component assembly (1) is connected.
    [2]
    2. Electrical component arrangement (1) according to claim 1, characterized in that the electrical component arrangement (1) further comprises a second discrete semiconductor component (7), which second discrete semiconductor component (7) has a second housing (8) with a second, as electrical Contact of the second semiconductor device (7) formed, the housing outer surface (9), and that the second housing outer surface (9) next to the first housing outer surface (4) on the same electrically conductive plate (5) is arranged to be electrically conductive.
    [3]
    3. Electrical component arrangement (1) according to claim 2, characterized in that the first discrete semiconductor component (2) as a semiconductor switching element, in particular as IGBT (10) is formed, that the second discrete semiconductor device (7) as a diode (11) is formed ,
    [4]
    4. Electrical component assembly (1) according to any one of claims 2 or 3, characterized in that the first housing (3) and / or the second housing (8) as a standard semiconductor housing, in particular as TO-220 or TO-247, is formed.
    [5]
    5. Electrical component arrangement (1) according to one of claims 1 to 4, characterized in that the electrically conductive plate (5) comprising copper and / or aluminum and / or silver is formed.
    [6]
    6. Electrical component assembly (1) according to claim 5, characterized in that the electrically conductive plate (5) has a surface which is 3 to 7 times, in particular 5 times, as large as that on the plate (5) arranged first Housing outer surface (4) and / or second housing outer surface (9).
    [7]
    7. Electrical component arrangement (1) according to one of claims 1 to 6, characterized in that the electrically conductive plate (5) with an electrical supply line (12), in particular a busbar (13) is electrically connected.
    [8]
    8. Electrical component arrangement (1) according to one of claims 1 to 7, characterized in that the cooling body (6) as a fluid-cooled cooling body (6) comprising fluid passageways (14), in particular as a cooling rail is formed.
    [9]
    9. Electrical component arrangement (1) according to one of claims 1 to 8, characterized in that the cooling body (6) is designed as a ceramic heat sink, preferably comprising aluminum nitride.
    [10]
    10. Electrical device (15) with an electrical component arrangement (1) according to one of claims 1 to 9.
    [11]
    11. Electrical device (15) according to claim 10, characterized in that the electrical device (15) has at least one electrical circuit (16) that the electrical circuit (16) the first discrete semiconductor device (2) and the second discrete semiconductor device ( 7).
    [12]
    12. Electrical device (15) according to claim 11, characterized in that the electrical component arrangement (1) according to one of claims 3 to 8 is formed, and that the second discrete semiconductor component (7) as freewheeling diode parallel to the first discrete semiconductor component (2 ) is connected in the electrical circuit (16).
    [13]
    13. Electrical device (15) according to claim 11 or 12, characterized in that the electrical device (15) as an inverter (18) is formed, comprising at least one electrical half-bridge (17), and that the first discrete semiconductor device (2) and the second discrete semiconductor component (7) together form a variable resistor of the electrical half-bridge (17).

    Gibler & Poth Patent Attorneys OG (Dr. F. Gibler or Dr. W. Poth)
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    引用文献:
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    法律状态:
    优先权:
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    ATA171/2014A|AT515440B1|2014-03-10|2014-03-10|Electrical component arrangement|ATA171/2014A| AT515440B1|2014-03-10|2014-03-10|Electrical component arrangement|
    PCT/AT2015/000037| WO2015135010A1|2014-03-10|2015-03-10|Electric component assembly|
    MA039723A| MA39723A|2014-03-10|2015-03-10|Electric component assembly|
    EP15718426.8A| EP3117458B1|2014-03-10|2015-03-10|Electric component assembly|
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